2011/11 – 2012/4, University of North Carolina at Charlotte (USA), Department of Electrical and Computer
1. 国家自然科学基金青年项目,LED芯片老化过程中有源区的缺陷演化机理研究,2016/1-2018/12,25万元,主持。
2. 国家自然科学基金青年项目,基于电场调制的金属辅助刻蚀技术及其机理研究,2017/1-2019/12,20万元,
3. 中央高校基本科研业务费厦门大学校长基金项目,LED芯片老化过程中有源区的缺陷演化机理及光源寿命
Y. Tu, Y. Ruan, L. Zhu, Q. Tu, H. Wang, J. Chen, Y. Lu, Y. Gao, T. Shih, Z. Chen, Y. Lin*, Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature, Journal of Applied Physics, 2017, 123(16): 161544. (SCI 三区)
H. Zhu, Y. Lu, T. Wu, Z. Guo, L. Zhu, J. Xiao, Y. Tu, Y. Gao*, Y. Lin*, and Z. Chen, IEEE Trans. Electron Dev., vol. 64, no.5, pp.2326-2329. (SCI二区)
T. Wu, Y. Lu, Z. Guo, L. Zheng, H. Zhu, Y. Xiao, T. Shih, Y. Lin*, and Z. Chen*, Opt. Exp. 25, pp 4887-4897, 2017. (SCI二区, TOP)
S. Lin; T. Shih; W. Yan; Y. Lu; Y. Lin*; R. R. G. Chang; Z. Chen*, IEEE Trans. Electron Dev., vol. 64, no.4, pp.1597-1601, 2017. (SCI二区)
Y. Lin, Z. Peng, L. Zhu*, W. Yan, T. Shih, T. Wu, Y. Lu*, Y. Gao, Z. Chen, Z. Guo, and Z. Liu, Appl. Phys. Exp.9, 092101 (2016). (SCI二区)
H. W. Wang, Y. Lin*, L. H. Zhu, Y. J. Lu, Y. Tu, Z. G. Liu, Z. H. Deng W. C. Tang, Y. L. Gao, Z. Chen, Opt. Exp. 24, pp 11594-11600, 2016. (SCI二区, TOP)
Y. Lin*, Y. Zhang, Z. Q. Guo, J. H. Zhang, W. L. Huang, Y. J. Lu, Z. H. Deng, Z. G. Liu, and Y. G. Cao, Opt. Exp. 23, pp A979-A986, 2015. (SCI二区, TOP)
Y. Lin, Z. H. Deng, Z. Q. Guo, Z. G. Liu, H. Lan, Y. J. Lu, and Y. G. Gao*, Opt. Exp. 22, pp A1029-A1039, 2014. (SCI二区, TOP)
Y. Lin*, Y. Zhang*, Z. Q. Liu, L. Q. Su, J. H. Zhang, T. B. Wei, Z. Chen, J. Appl. Phys. 115, pp 023103, 2014. (SCI三区)
Y. Lin, Y. Zhang*, Z. Q. Liu, L. Q. Su, J. H. Zhang, T. B. Wei, Z. Chen, Appl. Phys. Lett.101, pp 252103, 2012. (SCI二区, TOP)
Y. Lin, Y. L. Gao, Y. J. Lu*, L. H. Zhu, Y. Zhang, and Z. Chen, Appl. Phys. Lett.100, pp 202108, 2012. (SCI二区, TOP)
Y. Lin, Y. J. Lu, Y. L. Gao∗, Y. L. Chen, and Z. Chen*, Thermochimica Acta520, pp 105-109, 2011. (SCI四区)
Ph. D. Department of Electronics Science, Xiamen University, 2012
B. S. Department of Physics, Southeast University, 2007
Appointments
Associate Professor, Department of Electronics Science, Xiamen University, Feb. 2018 – present.
Assistant Professor, Department of Electronics Science, Xiamen University, Jan. 2015 – Jan. 2018.
Research Fellow, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Dec. 2012 - Jan. 2015
Visiting Student, Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte
Projects and Funds
The National Natural Science Foundation of China (Grant No. 61504112), Investigation on the defect evolution in the active region of LEDs during ageing test, Jan. 2016 – Dec. 2018, CNY 250 k, Host.
The National Natural Science Foundation of China (Grant No. 51605404), The study of electrical modulation of metal-assisted chemical etching technique and its mechanism, Jan. 2017 – Dec. 2019, CNY 200 k, Attendee.
The Fundamental Research Funds for the Central Universities, Investigation on the defect evolution in the active region of LEDs and quick method for predicting the lifespan of light sources, Jan. 2015 – Dec. 2017, CNY 320 k, Host.
Major Publication List
Y. Tu, Y. Ruan, L. Zhu, Q. Tu, H. Wang, J. Chen, Y. Lu, Y. Gao, T. Shih, Z. Chen, Y. Lin*, Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature, Journal of Applied Physics, 2017, 123(16): 161544.
H. Zhu, Y. Lu, T. Wu, Z. Guo, L. Zhu, J. Xiao, Y. Tu, Y. Gao*, Y. Lin*, and Z. Chen,A Bipolar-Pulse Voltage Method for Junction Temperature Measurement of Alternating Current Light-Emitting Diodes, IEEE Trans. Electron Dev., vol. 64, no.5, pp.2326-2329.
T. Wu, Y. Lu, Z. Guo, L. Zheng, H. Zhu, Y. Xiao, T. Shih, Y. Lin*, and Z. Chen*,Improvements of Mesopic Luminance for Light-emitting-diode-based Outdoor Light Sources via Tuning Scotopic/Photopic Ratios Opt. Exp. 25, pp 4887-4897, 2017.
S. Lin; T. Shih; W. Yan; Y. Lu; Y. Lin*; R. R. G. Chang; Z. Chen*,Maximum Limits on External Quantum Efficiencies in Bare LEDs, IEEE Trans. Electron Dev., vol. 64, no.4, pp.1597-1601, 2017.
Y. Lin, Z. Peng, L. Zhu*, W. Yan, T. Shih, T. Wu, Y. Lu*, Y. Gao, Z. Chen, Z. Guo, and Z. Liu,Evolution of Crystal Imperfections During Current-Stress Ageing Tests of Green InGaN Light-Emitting Diodes, Appl. Phys. Exp.9, 092101 (2016).
H. W. Wang, Y. Lin*, L. H. Zhu, Y. J. Lu, Y. Tu, Z. G. Liu,2 Z. H. Deng W. C. Tang, Y. L. Gao, Z. Chen,Temperature Dependent Carrier Localization in AlGaInN Near-Ultraviolet Light-Emitting Diodes, Opt. Exp. 24, pp 11594-11600, 2016.
Y. Lin*, Y. Zhang, Z. Q. Guo, J. H. Zhang, W. L. Huang, Y. J. Lu, Z. H. Deng, Z. G. Liu, and Y. G. Cao,Defects Dynamics During Ageing Cycles of InGaN Blue Light-Emitting Diodes Revealed by Evolution of External Quantum Efficiency - Current Dependence, Opt. Exp. 23, pp A979-A986, 2015.
Y. Lin, Z. H. Deng, Z. Q. Guo, Z. G. Liu, H. Lan, Y. J. Lu, and Y. G. Gao*,Study on the Correlations Between Color Rendering Indices and the Spectral Power Distribution, Opt. Exp. 22, pp A1029-A1039, 2014.
Y. Lin*, Y. Zhang*, Z. Q. Liu, L. Q. Su, J. H. Zhang, T. B. Wei, Z. Chen,Interplay of Point Defects, Extended Defects, and Carrier Localization in The Efficiency Droop of InGaN Quantum Wells Light-Emitting Diodes Investigated Using Spatially Resolved Electroluminescence and Photoluminescence, J. Appl. Phys. 115, pp 023103, 2014.
Y. Lin, Y. Zhang*, Z. Q. Liu, L. Q. Su, J. H. Zhang, T. B. Wei, Z. Chen,Spatially Resolved Study of Quantum Efficiency Droop in InGaN Light-Emitting Diodes, Appl. Phys. Lett.101, pp 252103, 2012.
Y. Lin, Y. L. Gao, Y. J. Lu*, L. H. Zhu, Y. Zhang, and Z. Chen,Study of Temperature Sensitive Optical Parameters and Junction Temperature Determination of Light-Emitting Diodes, Appl. Phys. Lett.100, pp 202108, 2012.
Y. Lin, Y. J. Lu, Y. L. Gao∗, Y. L. Chen, and Z. Chen*,Measuring the Thermal Resistance of LED Packages in Practical Circumstances, Thermochimica Acta520, pp 105-109, 2011.